| PART |
Description |
Maker |
| PSMN9R1-30YL |
N-channel 9.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m? 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| PHD18NQ10T PHP18NQ10T PHB18NQ10T PHB18NQ20T |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor 18 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHP18NQ20T PHB18NQ20T PHB_PHP18NQ20T_1 |
N-channel TrenchMOS transistor(N沟道TrenchMOS 晶体管逻辑电平场效应管)
From old datasheet system
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHW35NQ20T PHW35NQ20T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK9618-55 BUK9618-56 BUK9618-55118 |
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP SEMICONDUCTORS
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| VG95328C |
One Part M30 Proximity Sensor
|
Honeywell Sensing
|
| PHX8NQ11T PHX8NQ11T127 |
N-channel TrenchMOS-TM standard level FET 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220F, FULL PACK-3
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| XX630A3PCM12 |
ultrasonic sensor cylindrical M30 - Sn 8 m - NC NO - M12 connector
|
List of Unclassifed Manufacturers
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